K9F4008W0A-TCB0 Datasheet (512K x 8 bit NAND Flash Memory)

Part: K9F4008W0A-TCB0
Manufacturer: Samsung Semiconductor
Size: 558.38 KB

K9F4008W0A-TCB0 Key Features

Voltage Supply : 2.7V ~ 5.5V
Organization
Memory Cell Array : (4M + 128K)bit x 8bit
Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
Page Program : (512 + 16)Byte
Block Erase : (8K + 256)Byte
Status Register
528-Byte Page Read Operation
Random Access : 10µs(Max.)

Related Samsung Semiconductor Datasheets

Part Number	Description
K9F4008W0A-TIB0	512K x 8 bit NAND Flash Memory
K9F4G08U0A	(K9xxG08UxA) FLASH MEMORY
K9F4G08U0M	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F4G08U1M	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F1208B0B	64M x 8 Bit NAND Flash Memory

K9F4008W0A-TCB0 Description

SE is remended to coupled to GND or Vcc and should not be toggled during reading or programming. 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets ready for any mand sequences ~ 2.5V Draft Date April 10th 1998 April 10th 1999 Remark Advance July 23th 1999 0.3 Sep.