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K9F4008W0A-TIB0 Datasheet 512k X 8 Bit Nand Flash Memory

Manufacturer: Samsung Semiconductor

Overview: K9F3208W0A-TCB0, K9F3208W0A-TIB0 Document Title 4M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 Initial issue. Data Sheet, 1999 1. Added CE don’t care mode during the data-loading and reading 0.2 1. Revised real-time map-out algorithm(refer to technical notes) 2. Removed erase suspend/resume mode 1. Changed device name - KM29W32000AT -> K9F3208W0A-TCB0 - KM29W32000AIT -> K9F3208W0A-TIB0 1. Changed invalid block(s) marking method prior to shipping - The invalid block(s) information is written the 1st or 2nd page of the invalid block(s) with 00h data --->The invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has non-FFh data at the column address of 517. 2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

- SE is remended to coupled to GND or Vcc and should not be toggled during reading or programming.

1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets ready for any mand sequences ~ 2.5V Draft Date April 10th 1998 April 10th 1999 Remark Advance July 23th 1999 0.3 Sep.

15th 1999 0.4 July 17th 2000 0.5 July 23th 2001 ≈ ~ 2.5V VCC High WP WE 2.

Key Features

  • and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html. The attached datasheets are prepared and approved by.

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