• Part: K9F4008W0A-TIB0
  • Description: 512K x 8 bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 558.38 KB
K9F4008W0A-TIB0 Datasheet (PDF) Download
Samsung Semiconductor
K9F4008W0A-TIB0

Description

The K9F3208W0A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit.

Key Features

  • Voltage Supply : 2.7V ~ 5.5V
  • Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register
  • 528-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access : 50ns(Min.)
  • Fast Write Cycle Time - Program Time : 250µs(Typ.) - Block Erase Time : 2ms(Typ.)
  • mand/Address/Data Multiplexed I/O port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 1Million Program/Erase Cycles - Data Retention : 10 years
  • mand Register Operation
  • 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) - Forward Type FLASH MEMORY