K9F4008W0A-TIB0 Overview
SE is remended to coupled to GND or Vcc and should not be toggled during reading or programming. 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets ready for any mand sequences ~ 2.5V Draft Date April 10th 1998 April 10th 1999 Remark Advance July 23th 1999 0.3 Sep.
K9F4008W0A-TIB0 Key Features
- Voltage Supply : 2.7V ~ 5.5V
- Organization
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
- Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
- Status Register
- 528-Byte Page Read Operation
- Random Access : 10µs(Max.)