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K9F8008W0M-TCB0 Datasheet

Manufacturer: Samsung Semiconductor
K9F8008W0M-TCB0 datasheet preview

Datasheet Details

Part number K9F8008W0M-TCB0
Datasheet K9F8008W0M-TCB0_Samsungsemiconductor.pdf
File Size 445.29 KB
Manufacturer Samsung Semiconductor
Description 1M x 8 bit NAND Flash Memory
K9F8008W0M-TCB0 page 2 K9F8008W0M-TCB0 page 3

K9F8008W0M-TCB0 Overview

The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250 µs and an erase operation can be performed in typically 2ms on a 4K-byte block.

K9F8008W0M-TCB0 Key Features

  • Voltage supply : 2.7V ~ 5.5V
  • Organization
  • Memory Cell Array : (1M + 32K)bit x 8bit
  • Data Register : (256 + 8)bit x8bit
  • Automatic Program and Erase(Typical)
  • Page Program : (256 + 8)Byte in 250µs
  • Block Erase : (4K + 128)Byte in 2ms
  • Status Register
  • 264-Byte Page Read Operation
  • Random Access : 10µs(Max.)
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K9F8008W0M-TCB0 Distributor

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