K9K2G08Q0M-P Description
IOL(R/B) of 1.8V device is changed. 8mA -->4mA Draft Date Aug. 2001 Remark Advance Preliminary 0.2.
K9K2G08Q0M-P is 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory manufactured by Samsung Semiconductor.
| Part Number | Description |
|---|---|
| K9K2G08Q0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-YCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
IOL(R/B) of 1.8V device is changed. 8mA -->4mA Draft Date Aug. 2001 Remark Advance Preliminary 0.2.