| Part number | K9K2G08Q0M-Y |
|---|---|
| Datasheet | K9K2G08Q0M-Y_Samsungsemiconductor.pdf |
| File Size | 734.52 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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IOL(R/B) of 1.8V device is changed. 8mA -->4mA Draft Date Sep. 2001 Remark Advance 0.2.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K9K2G08Q0M-YCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-P | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08R0A | FLASH MEMORY |
| K9K2G08U0A | FLASH MEMORY |
| K9K2G08U0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-F | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
