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K9K2G08Q0M-Y - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Features

  • Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M) : (2K + 64)bit x8bit -X16 device(K9K2G16X0M) : (1K + 32)bit x16bit.
  • Automatic Program and Erase -.

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Datasheet preview – K9K2G08Q0M-Y

Datasheet Details

Part number K9K2G08Q0M-Y
Manufacturer Samsung semiconductor
File Size 734.52 KB
Description 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Datasheet download datasheet K9K2G08Q0M-Y Datasheet
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Full PDF Text Transcription

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K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Sep. 19.2001 Nov. 5. 2001 Remark Advance 0.2 1. 5th cycle of ID is changed : 40h --> 44h Jan. 23.2002 0.3 1. Add WSOP Package Dimensions. May. 29.2002 0.4 1. Max Icc value of 1.8V/3.3V device is changed. - Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device) - Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device) Sep. 12.2002 0.5 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.
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