• Part: K9K2G08R0A
  • Description: FLASH MEMORY
  • Manufacturer: Samsung Semiconductor
  • Size: 1.02 MB
K9K2G08R0A Datasheet (PDF) Download
Samsung Semiconductor
K9K2G08R0A

Description

Offered in 256Mx8bit the K9K2G08X0A is 2G bit with spare 64M bit capacity.

Key Features

  • Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V
  • Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit
  • Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte
  • Page Read Operation - Page Size - 2K-Byte - Random Read : 25µs(Max.) - Serial Access : 50ns(Min.)
  • Fast Write Cycle Time - Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
  • mand Register Operation
  • Unique ID for Copyright Protection