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K9K2G08R0A - FLASH MEMORY

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Samsung semiconductor

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K9K2G08R0A FLASH MEMORY by Samsung semiconductor - Datasheet Preview — Datasheet preview – K9K2G08R0A

Datasheet Details

Part number	K9K2G08R0A
Manufacturer	Samsung semiconductor
File Size	1.02 MB
Description	FLASH MEMORY
Datasheet	K9K2G08R0A Datasheet
Additional preview pages of the K9K2G08R0A datasheet.

Product details

Description

of Copy-back program is changed 4.

Features

Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V.
Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte.
Page Read Operation - Page Size - 2K-Byte - Random Read : 25µs(Max. ) - Serial Access : 50ns(Min. ).
Fast Write Cycle Time - Program time : 300µs(Typ. ) - Block Erase Time : 2ms(Typ. ).
Command/Address/Data Mult.

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Other Datasheets by Samsung semiconductor

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Published: May 3, 2010 |