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K9K2G08R0A page 2
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K9K2G08R0A page 3
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K9K2G08R0A Key Features

  • Voltage Supply
  • 2.7 V ~3.6 V
  • 1.65V ~ 1.95V
  • Organization
  • Memory Cell Array
  • (256M + 8,192K)bit x 8bit
  • Data Register
  • (2K + 64)bit x8bit
  • Automatic Program and Erase
  • Page Program

Related Samsung Semiconductor Datasheets

Part Number Description
K9K2G08Q0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-P 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory