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K9K2G08R0A - FLASH MEMORY

Description

of Copy-back program is changed 4.

TSOP package is deleted 1.

CE access time : 23ns->35ns (p.9) 1.

Features

  • Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V.
  • Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit.
  • Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte.
  • Page Read Operation - Page Size - 2K-Byte - Random Read : 25µs(Max. ) - Serial Access : 50ns(Min. ).
  • Fast Write Cycle Time - Program time : 300µs(Typ. ) - Block Erase Time : 2ms(Typ. ).
  • Command/Address/Data Mult.

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Datasheet Details

Part number K9K2G08R0A
Manufacturer Samsung semiconductor
File Size 1.02 MB
Description FLASH MEMORY
Datasheet download datasheet K9K2G08R0A Datasheet
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K9K2G08U0A K9K2G08R0A FLASH MEMORY www.DataSheet4U.com K9K2G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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