K9XXG08UXA
K9XXG08UXA is 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory manufactured by Samsung Semiconductor.
FEATURES
- Voltage Supply
- 2.70V ~ 3.60V
- Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
- K9NBG08U5A : 50ns(Min.)
- Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
- mand Driven Operation
- Intelligent Copy-Back with internal 1bit/528Byte EDC
- Unique ID for Copyright Protection
- Package :
- K9K8G08U0A-PCB0/PIB0 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-PCB0/PIB0 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch)
-...
