KFG1G1612M-DEB5 Overview
Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current.
Datasheet Details
| Part number | KFG1G1612M-DEB5 |
|---|---|
| Datasheet | KFG1G1612M-DEB5_Samsungsemiconductor.pdf |
| File Size | 1.76 MB |
| Manufacturer | Samsung Semiconductor |
| Description | FLASH MEMORY |
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