KFG1G1612M-DEB5 Description
Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current.
KFG1G1612M-DEB5 is FLASH MEMORY manufactured by Samsung Semiconductor.
| Part Number | Description |
|---|---|
| KFG1G16Q2M | FLASH MEMOR |
| KFG1G16U2B | 1Gb OneNAND B-die |
| KFG1G16U2B-DIB6 | 1Gb OneNAND B-die |
| KFG1216D2A | FLASH MEMORY |
| KFG1216D2M | FLASH MEMORY |
Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current.