KFG1216D2M - FLASH MEMORY

This page provides the datasheet information for the KFG1216D2M, a member of the KFG1216Q2M FLASH MEMORY family.

Product Overview

Samsung semiconductor

Part number	KFG1216D2M
Manufacturer	Samsung semiconductor
File Size	1.30 MB
Description	FLASH MEMORY
Datasheet	KFG1216D2M Datasheet
Additional preview pages of the KFG1216D2M datasheet.

for below operations -.

Reset -.

Write Protection -.

Architecture.
Design Technology: 0.12um.
Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V.
Organization - Host Interface:16bit.
Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM.
NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY.
Performance.
Host Interface type - Synchronous Burst Read : Clock Fr.

Other Datasheets by Samsung semiconductor

Published: Jan 25, 2010 |