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KFG1216Q2M Datasheet FLASH MEMORY

Manufacturer: Samsung Semiconductor

Overview: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.

Key Features

  • Architecture.
  • Design Technology: 0.12um.
  • Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V.
  • Organization - Host Interface:16bit.
  • Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM.
  • NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY.
  • Performance.
  • Host Interface type - Synchronous Burst Read : Clock Fr.