KFG1216Q2A Overview
Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy Back Operation with Random Data Input 2. Changed tBA from 11ns to 11.5ns.
| Part number | KFG1216Q2A |
|---|---|
| Datasheet | KFG1216Q2A_Samsungsemiconductor.pdf |
| File Size | 1.47 MB |
| Manufacturer | Samsung Semiconductor |
| Description | FLASH MEMORY |
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Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy Back Operation with Random Data Input 2. Changed tBA from 11ns to 11.5ns.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| KFG1216Q2M | FLASH MEMORY |
| KFG1216D2A | FLASH MEMORY |
| KFG1216D2M | FLASH MEMORY |
| KFG1216U2A | FLASH MEMORY |
| KFG1216U2M | FLASH MEMORY |
| KFG1G1612M-DEB5 | FLASH MEMORY |
| KFG1G16Q2M | FLASH MEMOR |
| KFG1G16U2B | 1Gb OneNAND B-die |
| KFG1G16U2B-DIB6 | 1Gb OneNAND B-die |
| KFG2816Q1M-DEB | (KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory |