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KFH1G16Q2M - FLASH MEMORY

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Samsung semiconductor

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KFH1G16Q2M FLASH MEMORY by Samsung semiconductor - Datasheet Preview — Datasheet preview – KFH1G16Q2M

Datasheet Details

Part number	KFH1G16Q2M
Manufacturer	Samsung semiconductor
File Size	1.30 MB
Description	FLASH MEMORY
Datasheet	KFH1G16Q2M Datasheet
Additional preview pages of the KFH1G16Q2M datasheet.

Product details

Description

for below operations -.

Features

Architecture.
Design Technology: 0.12um.
Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V.
Organization - Host Interface:16bit.
Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM.
NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY.
Performance.
Host Interface type - Synchronous Burst Read : Clock Fr.

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Published: Jan 25, 2010 |