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KFH1G16Q2M - FLASH MEMORY

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Description

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Features

  • Architecture.
  • Design Technology: 0.12um.
  • Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V.
  • Organization - Host Interface:16bit.
  • Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM.
  • NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY.
  • Performance.
  • Host Interface type - Synchronous Burst Read : Clock Fr.

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Datasheet Details

Part number KFH1G16Q2M
Manufacturer Samsung semiconductor
File Size 1.30 MB
Description FLASH MEMORY
Datasheet download datasheet KFH1G16Q2M Datasheet
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OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) 1.8V(1.7V~1.95V) Temperature Extended Extended Industrial Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) N/A www.DataSheet4U.com Version: Ver. 1.4 Date: June 15th, 2005 1 OneNAND512/OneNAND1GDDP FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED www.DataSheet4U.
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