KFH2G1612M-DEB5 Datasheet | Samsung Semiconductor

overview , revision history, and product ordering information. Section 2.0 describes the One NAND device. Section 3.0 provides information about device operation. Electrical specifications and timing waveforms are in Sections 4.0 though 6.0. Section 7.0 provides additional application and technical notes pertaining to use of the One NAND. Package dimensions are found in Section 8.0 .. INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. Mux One NAND™‚ is a trademark of Samsung Electronics pany, Ltd. Other names and brands may be claimed as the property of their rightful owners. Copyright © 2005, Samsung Electronics pany, Ltd One NAND4G(KFW4G16Q2M-DEB5) One NAND2G(KFH2G16Q2M-DEB5) One NAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY One NAND Revision History Document Title Revision History Revision No. History 0.0 Initial Issue. 1. Corrected Errata 2. Revised cache read flow chart 3. Revised standby current 4. Revised spare area description 5. Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Corrected Errata 2. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current 4. Changed t BA from 11ns to 11.5ns Draft Date Oct. 26, 2004...