KFW4G1612M-DEB5 Overview
Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current.
KFW4G1612M-DEB5 datasheet by Samsung Semiconductor.
| Part number | KFW4G1612M-DEB5 |
|---|---|
| Datasheet | KFW4G1612M-DEB5_Samsungsemiconductor.pdf |
| File Size | 1.76 MB |
| Manufacturer | Samsung Semiconductor |
| Description | FLASH MEMORY |
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Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current.
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| KFW4G16Q2M | FLASH MEMOR |
| KFW8G16Q2M | 2Gb OneNAND M-Die |