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KM23V8105G - 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM

This page provides the datasheet information for the KM23V8105G, a member of the KM23V8105D 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM family.

Datasheet Summary

Description

The KM23V8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes PAGE read mode fun

Features

  • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
  • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max. ) 3.0V Operation : 120/50ns(Max. ).
  • 4 Words / 8 bytes page access.
  • Supply voltage : single +3.0V/ single +3.3V.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23V81.

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Datasheet Details

Part number KM23V8105G
Manufacturer Samsung semiconductor
File Size 91.04 KB
Description 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
Datasheet download datasheet KM23V8105G Datasheet
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KM23V8105D(G) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.) • 4 Words / 8 bytes page access • Supply voltage : single +3.0V/ single +3.3V • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23V8105D : 42-DIP-600 -.
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