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KM23V8105G Datasheet 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM

Manufacturer: Samsung Semiconductor

Download the KM23V8105G datasheet PDF. This datasheet also includes the KM23V8105D variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (KM23V8105D_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The KM23V8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes PAGE read mode function, page read mode allows 4 words(or 8 bytes) of data to read fast in the same page, CE and A2 ~ A18 should not be changed.

This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.

Overview

KM23V8105D(G) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM.

Key Features

  • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
  • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max. ) 3.0V Operation : 120/50ns(Max. ).
  • 4 Words / 8 bytes page access.
  • Supply voltage : single +3.0V/ single +3.3V.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23V81.

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