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KM29U128IT - 16M x 8 Bit NAND Flash Memory

General Description

The KM29U128 is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage supply : 2.7V~3.6V.
  • Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte.
  • 528-Byte Page Read Operation - Random Access : 10µ s(Max. ) - Serial Page Access : 50ns(Min. ).
  • Fast Write Cycle Time - Program time : 200µ s(typ. ) - Block Erase time : 2ms(typ. ).
  • Command/Address/Data Multiplexed I/O port.

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📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM29U128T 16M x 8 Bit NAND Flash Memory
KM29U64000IT 8M x 8 Bit NAND Flash Memory
KM29U64000T 8M x 8 Bit NAND Flash Memory
KM29W040AT 512K x 8 bit NAND Flash Memory
KM29W32000AIT 4M x 8-Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM29U128T, KM29U128IT Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1) Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2) Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3) Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1.1 1) Changed tR Parameter : 7 µs(Max.) → 10µs(Max.) 2) Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.) Spare Array 3 cycles(Max.) 3) Added CE don’ t care mode during the data-loading and reading April 10th 1999 Final Draft Date April 10th 1998 July 14th 1998 Remark Preliminary Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.