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KM29U64000T Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

KM29U64000T datasheet preview

Datasheet Details

Part number KM29U64000T
Datasheet KM29U64000T KM29U64000IT Datasheet (PDF)
File Size 481.39 KB
Manufacturer Samsung Semiconductor
Description 8M x 8 Bit NAND Flash Memory
KM29U64000T page 2 KM29U64000T page 3

KM29U64000T Overview

The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200 µs and an erase operation can be performed in typically 2ms on an 8K-byte block.

KM29U64000T Key Features

  • Voltage Supply : 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (8M + 256K)bit x 8bit
  • Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase
  • Page Program : (512 + 16)Byte
  • Block Erase : (8K + 256)Byte
  • 528-Byte Page Read Operation
  • Random Access : 7µs(Max.)
  • Serial Page Access : 50ns(Min.)
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KM29U64000T Distributor

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