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KM416C1004C Datasheet

1m X 16bit CMOS Dynamic Ram With Extended Data Out

Manufacturer: Samsung Semiconductor

KM416C1004C Overview

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.

KM416C1004C Key Features

  • Part Identification
  • KM416C1004C/C-L (5V, 4K Ref.)
  • KM416C1204C/C-L (5V, 1K Ref.)
  • KM416V1004C/C-L (3.3V, 4K Ref.)
  • KM416V1204C/C-L (3.3V, 1K Ref.)
  • Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
  • 2 CAS Byte/Word Read/Write operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Self-refresh capability (L-ver only)

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
KM416C1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1200C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C256B 256K x 16Bit CMOS Dynamic RAM
KM416C256BL 256K x 16Bit CMOS Dynamic RAM
KM416C256BLL 256K x 16Bit CMOS Dynamic RAM
KM416C256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode

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