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KM416C254D

Manufacturer: Samsung Semiconductor

KM416C254D datasheet by Samsung Semiconductor.

KM416C254D datasheet preview

KM416C254D Datasheet Details

Part number KM416C254D
Datasheet KM416C254D_Samsungsemiconductor.pdf
File Size 840.16 KB
Manufacturer Samsung Semiconductor
Description 256K x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C254D page 2 KM416C254D page 3

KM416C254D Overview

This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional.

KM416C254D Key Features

  • Extended Data Out Mode operation
  • Part Identification
  • KM416C254D/DL (5V, 512 Ref.)
  • KM416V254D/DL (3.3V, 512 Ref.)
  • 2 CAS Byte/Wrod Read/Write operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Self-refresh capability (L-ver only)
  • TTL(5V)/LVTTL(3.3V) patible inputs and outputs
  • Early Write or output enable controlled write
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More Datasheets from Samsung Semiconductor

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Part Number Description
KM416C256B 256K x 16Bit CMOS Dynamic RAM
KM416C256BL 256K x 16Bit CMOS Dynamic RAM
KM416C256BLL 256K x 16Bit CMOS Dynamic RAM
KM416C256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1200C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

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