Datasheet4U Logo Datasheet4U.com

KM416C256D - 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode

Datasheet Summary

Description

This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. ¡Ü Fast Page Mode operation 2 CAS Byte/Wrod Read/Write oper.

📥 Download Datasheet

Datasheet preview – KM416C256D

Datasheet Details

Part number KM416C256D
Manufacturer Samsung semiconductor
File Size 83.78 KB
Description 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
Datasheet download datasheet KM416C256D Datasheet
Additional preview pages of the KM416C256D datasheet.

📁 Similar Datasheet

  • KM416C1200AT-6T - C-MOS 1M 16-BIT DYNAMIC RAM (ETC)
  • KM416S1020BT-G10T - CMOS 16M-Bit SDRAM (ETC)
  • KM416S1120AT - 521K x 16-Bit x 2 Bank SDRAM (Samsung Electronics)
  • KM416S1120D - 512K x 16bit x 2 Banks Synchronous DRAM LVTTL (ETC)
  • KM416S4020A - CMOS SDRAM (Samsung Electronics)
  • KM416S4020B - CMOS SDRAM (Samsung Electronics)
  • KM416S4021AT - CMOS SDRAM (Samsung Electronics)
  • KM416S4021B - CMOS SDRAM (Samsung Electronics)
  • KM4100 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4101 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
Other Datasheets by Samsung semiconductor
  • KM416C256B - 256K x 16Bit CMOS Dynamic RAM
  • KM416C256BL - 256K x 16Bit CMOS Dynamic RAM
  • KM416C256BLL - 256K x 16Bit CMOS Dynamic RAM
  • KM416C254D - 256K x 16Bit CMOS Dynamic RAM with Extended Data Out
  • KM416C1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  • KM416C1000C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  • KM416C1004C - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
  • KM416C1200B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Full PDF Text Transcription

Click to expand full text
KM416C256D, KM416V256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability.
Published: |