Samsung semiconductor KM416V4104B
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.| Part No. | KM416V4104B |
|---|---|
| Datasheet | KM416V4104B Download |
| Manufacturer |  Samsung semiconductor |
| Description | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| Buy | Stock & Price |
DESCRIPTION
Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.FEATURES
● Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)● Extended Data Out Mode operation
● 2 CAS Byte/Word Read/Write operation
● CAS-before-RAS refresh capability
● RAS-only and Hidden refresh capability
● Fast parallel test mode capability
● Self-refresh capability (L-ver only)
● LVTTL(3.3V) compatible inputs and outputs Unit : mW
● Early Write or output enable controlled write
● JEDEC Standard pinout
● Available in Plastic TSOP(II) packages
● +3.3V±0.3V power supply
● Active Power Dissipation Speed -45 -5 -6
● Refresh Cycles Part NO.
