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KM416V4104C

Manufacturer: Samsung Semiconductor

KM416V4104C datasheet by Samsung Semiconductor.

KM416V4104C datasheet preview

KM416V4104C Datasheet Details

Part number KM416V4104C
Datasheet KM416V4104C_Samsungsemiconductor.pdf
File Size 808.42 KB
Manufacturer Samsung Semiconductor
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4104C page 2 KM416V4104C page 3

KM416V4104C Overview

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional.

KM416V4104C Key Features

  • Part Identification
  • KM416V4004C/C-L(3.3V, 8K Ref.)
  • KM416V4104C/C-L(3.3V, 4K Ref.)
  • Extended Data Out Mode operation
  • 2 CAS Byte/Word Read/Write operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Fast parallel test mode capability
  • Self-refresh capability (L-ver only)
  • LVTTL(3.3V) patible inputs and outputs Unit : mW
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Part Number Description
KM416V4104B 4M x 16bit CMOS Dynamic RAM with Extended Data Out
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KM416V4000B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4004B 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4004C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
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KM416V1004A 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

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