KM44S32030B - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM44S32030B
Manufacturer	Samsung semiconductor
File Size	135.09 KB
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	KM44S32030B Datasheet
Additional preview pages of the KM44S32030B datasheet.

Product details

Description

The KM44S32030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 Page ) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K Cycle) CMO.

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Other Datasheets by Samsung semiconductor

KM44S32030 - 8M x 4Bit x 4 Banks Synchronous DRAM
KM44C1000B - 1M x 4Bit CMOS Dynamic RAM
KM44C1000BJ - 1M x 4Bit CMOS Dynamic RAM
KM44C1000BP - 1M x 4Bit CMOS Dynamic RAM
KM44C1000BT - 1M x 4Bit CMOS Dynamic RAM
KM44C1000BTR - 1M x 4Bit CMOS Dynamic RAM

Published: Apr 4, 2005 |