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KM48S16030B - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Datasheet Summary

Description

The KM48S16030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (4K cycle.

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Datasheet Details

Part number KM48S16030B
Manufacturer Samsung semiconductor
File Size 133.70 KB
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet download datasheet KM48S16030B Datasheet
Additional preview pages of the KM48S16030B datasheet.

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Full PDF Text Transcription

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KM48S16030B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030B Revision History Revision 0.0 (May 15, 1999) CMOS SDRAM • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. • Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.
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