KM48S16030B - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM48S16030B
Manufacturer	Samsung semiconductor
File Size	133.70 KB
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	KM48S16030B Datasheet
Additional preview pages of the KM48S16030B datasheet.

Product details

Description

The KM48S16030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

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Other Datasheets by Samsung semiconductor

KM48S16030 - 4M x 8Bit x 4 Banks Synchronous DRAM
KM48S16030A - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S8030C - 2M x 8Bit x 4 Banks Synchronous DRAM
KM48S8030D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48C2000B - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
KM48C2100B - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode

Published: Apr 4, 2005 |