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KM681000E - 128Kx8 bit Low Power CMOS Static RAM

Datasheet Summary

Description

The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and have various package types for user flexibility of system design.

Features

  • Process Technology: TFT.
  • Organization: 128Kx8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F CMOS SRAM.

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Datasheet Details

Part number KM681000E
Manufacturer Samsung semiconductor
File Size 157.26 KB
Description 128Kx8 bit Low Power CMOS Static RAM
Datasheet download datasheet KM681000E Datasheet
Additional preview pages of the KM681000E datasheet.

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Full PDF Text Transcription

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KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final www.DataSheet4U.com 1.01 December 1, 1999 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.
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