Samsung semiconductor KM681000E
The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.| Part No. | KM681000E |
|---|---|
| Datasheet | KM681000E Download |
| Manufacturer |  Samsung semiconductor |
| Description | 128Kx8 bit Low Power CMOS Static RAM |
| Buy | Stock & Price |
FEATURES
● Process Technology: TFT● Organization: 128Kx8
● Power Supply Voltage: 4.5~5.5V
● Low Data Retention Voltage: 2V(Min)
● Three state output and TTL Compatible
● Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F CMOS SRAM
GENERAL DESCRIPTION
PRODUCT FAMILY Power Dissipation Product Family KM681000EL KM681000EL-L KM681000ELI KM681000ELI-L 1. The parameters are tested with 50pF test load Operating Temperature Vcc Range Speed Standby (ISB1, Max) 50µA 10µA 50µA 15µA Operating (ICC2, Max) PKG Type Commercial(0~70°C) 4.5~5.5V Industrial(-40~85°C) 55 1)/70ns 32-DIP, 32-SOP 32-TSOP1-0820F 50mA 32-SOP -525 32-TSOP1-0820F 70ns PINDESCRIPTION
N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 VCC A15 CS2 A11 A9 A8 A13 A8 WE A9 CS2 A15 A11 VCC OE NC A16 A10 A14 A12 CS1 A7 I/O8 A6 A5 I/O7 A4 WE A13 I/O6 I/O5 I/O4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 FUNCTIONAL BLOCK DIAGRAM Clk gen.
