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KM681000E - 128Kx8 bit Low Power CMOS Static RAM

General Description

The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and have various package types for user flexibility of system design.

Key Features

  • Process Technology: TFT.
  • Organization: 128Kx8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F CMOS SRAM.

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📁 Similar Datasheet

Part Number Description Manufacturer
KM681000B 128K x 8-bit Low Power CMOS Static RAM Samsung
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KM684000B 512Kx8 bit Low Power CMOS Static RAM Samsung
KM684000C 512Kx8 bit Low Power CMOS Static RAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
KM681000C 128K x8 bit Low Power CMOS Static RAM
KM681001A 128K x 8 Bit High-Speed CMOS Static RAM
KM681001A 128K x 8 Bit High-Speed CMOS Static RAM
KM681001B 128K x 8 Bit High-Speed CMOS Static RAM
KM681002A 128Kx8 High Speed Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final www.DataSheet4U.com 1.01 December 1, 1999 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.