KM681000E Datasheet | Samsung Semiconductor

KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve t WP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final .. December 1, 1999 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. Revision 1.01 December 1999 KM681000E Family 128Kx8 bit Low Power CMOS Static RAM Features - Process Technology: TFT - Organization: 128Kx8 - Power Supply Voltage: 4.5~5.5V - Low Data Retention Voltage: 2V(Min) - Three state output and TTL patible - Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F CMOS SRAM GENERAL...