M366S3323ETS-C7A Datasheet PDF - Samsung semiconductor (M3xxSxxxxETx-C7A) SDRAM Unbuffered Module Specs

M366S3323ETS-C7A - (M3xxSxxxxETx-C7A) SDRAM Unbuffered Module

Datasheet Summary

Description

Pin Name A0 ~ A11 BA0 ~ BA1 DQ0 ~ DQ63 CB0 ~ CB7 CLK0 ~ 3 CKE0, CKE1 CS0 ~ CS3 RAS CAS WE Select bank Data input/output Check bit (Data-in/data-out) Clock input Clock enable input Chip select input Row address strobe Colume address strobe Write enable Function Address input (Multiplexed) VDD VSS VRE

Features

4 DQ5 DQ6 DQ7 CS U4 Serial PD SCL 47KΩ WP A0 SDA A1 A2 SA0 SA1 SA2 A0 ~ A11, BA0 & 1 RAS CAS WE CKE0 10Ω DQn VDD Vss.
SDRAM U0 ~ U8 SDRAM U0 ~ U8 SDRAM U0 ~ U8 SDRAM U0 ~ U8 SDRAM U0 ~ U8 Every DQpin of SDRAM CLK1/3 One 0.1uF and one 0.22 uF Cap. To all SDRAM.

Datasheet Details

Part number	M366S3323ETS-C7A
Manufacturer	Samsung semiconductor
File Size	486.89 KB
Description	(M3xxSxxxxETx-C7A) SDRAM Unbuffered Module
Datasheet	M366S3323ETS-C7A Datasheet
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Full PDF Text Transcription

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64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM Revision History Revision 1.0 (November., 2002) - First release Revision 1.1 (May, 2003) - Merged Spec. Revision 1.2 (June, 2003) - Correct Typo. Revision 1.3 (February, 2004) - Correct Typo. SDRAM Rev. 1.

Published: Nov 18, 2005 |