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M464S6454EN0 - SDRAM Unbuffered SODIMM

This page provides the datasheet information for the M464S6454EN0, a member of the M464S1654ETS SDRAM Unbuffered SODIMM family.

Description

Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 CLK0 ~ CLK1 CKE0 ~ CKE1 CS0 ~ CS1 RAS CAS Select bank Data input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Function Address input (Multiplexed) WE DQM0 ~ 7 VDD VSS SDA SCL DU NC Pin Name Write enable DQM Po

Features

  • ircuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 1.0.
  • # of component 50 SDRAM Unit V V °C W mA Note : Permanent device damage may occur if ".

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Datasheet preview – M464S6454EN0

Datasheet Details

Part number M464S6454EN0
Manufacturer Samsung semiconductor
File Size 268.98 KB
Description SDRAM Unbuffered SODIMM
Datasheet download datasheet M464S6454EN0 Datasheet
Additional preview pages of the M464S6454EN0 datasheet.

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Full PDF Text Transcription

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128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004 128MB, 256MB, 512MB Unbuffered SODIMM Revision History Revision 1.1 (Sepember, 2003) - Corrected typo. Revision 1.2 (February, 2004) - Corrected typo. Revision 1.3 (March. 2004) - Corrected package dimension. Revision 1.4 (March. 2004) - Modified DC Characteristics Notes. Revision 1.5 (May. 2004) - Added Note 5. sentense of tRDL parameter SDRAM Rev. 1.
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