M470T2953Bxx Datasheet | Samsung Semiconductor

Features - Performance range D5(DDR2-533) Speed@CL3 Speed@CL4 CL-t RCD-t RP 400 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps CK - JEDEC standard 1.8V ± 0.1V Power Supply - VDDQ = 1.8V ± 0.1V - 200 MHz f CK for 400Mb/sec/pin, 267MHz f CK for 533Mb/sec/pin - 4 Banks - Posted CAS - Programmable CAS Latency: 3, 4, 5 - Programmable Additive Latency: 0, 1 , 2 , 3 and 4 - Write Latency(WL) = Read Latency(RL) -1 - Burst Length: 4 , 8(Interleave/nibble sequential) - Programmable Sequential / Interleave Burst Mode - Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature ) - Off-Chip Driver(OCD) Impedance Adjustment - On Die Termination - Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C - support High Temperature Self-Refresh rate enable feature - Package: 60ball FBGA -...