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M470T2953Bxx Datasheet 200pin Unbuffered Sodimm

Manufacturer: Samsung Semiconductor

Overview: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

Key Features

  • Performance range D5(DDR2-533) Speed@CL3 Speed@CL4 CL-tRCD-tRP 400 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps CK.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
  • 4 Banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • Burst Length: 4.

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