M470T2953Bxx Overview
256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR...
M470T2953Bxx Key Features
- Performance range
- JEDEC standard 1.8V ± 0.1V Power Supply
- VDDQ = 1.8V ± 0.1V
- 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
- 4 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5
- Programmable Additive Latency: 0, 1 , 2 , 3 and 4
- Write Latency(WL) = Read Latency(RL) -1
- Burst Length: 4 , 8(Interleave/nibble sequential)
M470T2953Bxx Applications
- Samsung Electronics reserves the right to change products or specification without notice