M470T3354CZx Overview
256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR...
M470T3354CZx Key Features
- Performance range
- JEDEC standard 1.8V ± 0.1V Power Supply
- VDDQ = 1.8V ± 0.1V
- 4 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5
- Programmable Additive Latency: 0, 1 , 2 , 3 and 4
- Write Latency(WL) = Read Latency(RL) -1
- Burst Length: 4 , 8(Interleave/nibble sequential)
- Programmable Sequential / Interleave Burst Mode
M470T3354CZx Applications
- Samsung Electronics reserves the right to change products or specification without notice