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M470T3354CZx - DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM

Datasheet Summary

Description

Pin Name CK0,CK1 CK0,CK1 CKE0,CKE1 RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL Function Clock Inputs, positive line Clock Inputs, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge SDRAM Bank Addr

Features

  • Performance range E7 (DDR2-800) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 533 800 5-5-5 E6 (DDR2-667) 400 533 667 5-5-5 D5 (DDR2-533) 400 533 533 4-4-4 CC (DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin.
  • 4 Banks.
  • Posted CAS.
  • Programmable CAS Latency.

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Datasheet Details

Part number M470T3354CZx
Manufacturer Samsung semiconductor
File Size 328.84 KB
Description DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM
Datasheet download datasheet M470T3354CZx Datasheet
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256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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