Datasheet4U Logo Datasheet4U.com

MR18R162GDF0 Datasheet

(mr1xr1622(4/8/g)df0) Key Timing Parameters

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

MR18R162GDF0 Overview

MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) First copy. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits.

MR18R162GDF0 Key Features

  • High speed up to 1066 MHz RDRAM storage
  • 184 edge connector pads with 1mm pad spacing
  • Module PCB size : 133.35mm x 31.75mm x 1.27mm
  • 256Mb and 288Mb base PC800 RIMM Module
  • Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”)
  • 256Mb and 288Mb base PC1066 RIMM Module
  • Gold plated edge connector pad contacts
  • Serial Presence Detect(SPD) support
  • Operates from a 2.5 volt supply (±5%)
  • Powerdown self refresh modes

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
MR18R162GDF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R162GAF0 (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624GEG0 Key Timing Parameters
MR18R1628DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters

MR18R162GDF0 Distributor