K4E641612D Description
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional.
K4E641612D Key Features
- w i d t h , l o w p o w e r c o n s u m p t i o n a n d h i g h r e l i a b i l i t y
- Part Identification
- K4E661612D-TI/P(3.3V, 8K Ref.)
- K4E641612D-TI/P(3.3V, 4K Ref.)
- R A S-only and Hidden refresh capability
- Fast parallel test mode capability
- Self-refresh capability (L-ver only)
- LVTTL(3.3V) patible inputs and outputs
- Early Write or output enable controlled write
- JEDEC Standard pinout