K4F151611D Datasheet | Samsung Semiconductor

DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microputer, personal puter and portable machines. FEATURES - Part Identification - K4F171611D-J(T) (5V, 4K Ref.) - K4F151611D-J(T) (5V, 1K Ref.) - K4F171612D-J(T) (3.3V, 4K Ref.) - K4F151612D-J(T) (3.3V, 1K Ref.) - Active Power Dissipation Unit : m W Speed 4K -50 -60 324 288 3.3V 1K 504 468 4K 495 440 5V 1K 770 715 - Fast Page Mode operation - 2 CAS Byte/Word Read/Write operation - CAS-before-RAS refresh capability - RAS-only and Hidden refresh capability - Self-refresh capability (L-ver only) - TTL(5V)/LVTTL(3.3V) patible inputs and outputs - Early Write or output enable controlled write - JEDEC Standard pinout - Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages - Single +5V±10% power supply (5V product) - Single +3.3V±0.3V power supply (3.3V product) - Refresh Cycles Part NO. K4F171611D K4F171612D K4F151611D K4F151612D VCC 5V 3.3V 5V 3.3V 1K 16ms Refresh cycle 4K Refresh period Normal 64ms 128ms L-ver RAS UCAS LCAS W FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer VBB Generator Refresh Timer Refresh Control Refresh Counter Row Decoder DQ0 to DQ7 - Perfomance Range Speed -50 -60 Memory Array 1,048,576 x16...