K4F160411D Datasheet | Samsung Semiconductor

DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for high level puter, microputer and personal puter. FEATURES - Part Identification - K4F170411D-B(F) (5V, 4K Ref.) - K4F160411D-B(F) (5V, 2K Ref.) - K4F170412D-B(F) (3.3V, 4K Ref.) - K4F160412D-B(F) (3.3V, 2K Ref.) - Active Power Dissipation Unit : m W Speed 4K -50 -60 324 288 3.3V 2K 396 360 4K 495 440 5V 2K 605 550 - Fast Page Mode operation - CAS-before-RAS refresh capability - RAS-only and Hidden refresh capability - Self-refresh capability (L-ver only) - Fast parallel test mode capability - TTL(5V)/LVTTL(3.3V) patible inputs and outputs - Early Write or output enable controlled write - JEDEC Standard pinout - Available in Plastic SOJ and TSOP(II) packages - Single +5V±10% power supply (5V product) - Single +3.3V±0.3V power supply (3.3V product) - Refresh Cycles Part NO. K4F170411D K4F170412D K4F160411D K4F160412D VCC 5V 3.3V 5V 3.3V 2K 32ms Refresh cycle 4K Refresh period Normal 64ms 128ms L-ver RAS CAS W FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Data in Refresh Timer Refresh Control Refresh Counter Memory Array 4,194,304 x 4 Cells Row Decoder Sense Amps & I/O Buffer - Performance Range Speed -50 -60 DQ0 to DQ3 t RAC 50ns 60ns t CAC 13ns 15ns t RC 90ns 110ns t PC 35ns 40ns Remark 5V/3.3V 5V/3.3V A0-A11 (A0 - A10) - 1 A0 -...