K4F660811B Datasheet (8M x 8bit CMOS Dynamic RAM)

Part: K4F660811B
Manufacturer: Samsung Semiconductor
Size: 367.61 KB

K4F660811B Key Features

Part Identification
K4F660811B-JC(5.0V, 8K Ref.)
K4F640811B-JC(5.0V, 4K Ref.)
K4F660811B-TC(5.0V, 8K Ref.)
K4F640811B-TC(5.0V, 4K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) patible inputs and outputs

Related Samsung Semiconductor Datasheets

Part Number	Description
K4F660811B	8M x 8bit CMOS Dynamic RAM
K4F660812D	8M x 8bit CMOS Dynamic RAM
K4F660412D	16M x 4bit CMOS Dynamic RAM
K4F661612B	4M x 16bit CMOS Dynamic RAM
K4F661612C	4M x 16bit CMOS Dynamic RAM

K4F660811B Description

This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), package type (SOJ or TSOP-II) are optional.