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K4J52324QE - 512Mbit GDDR3 SDRAM

General Description

FOR 2M x 32Bit x 8 Bank GDDR3 SDRAM The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • 1.9V + 0.1V power supply for device operation for -BJ.
  • 1.9V + 0.1V power supply for I/O interface for -BJ.
  • 1.8V + 0.1V power supply for device operation for -BC.
  • 1.8V + 0.1V power supply for I/O interface for -BC.
  • On-Die Termination (ODT).
  • Output Driver Strength adjustment by EMRS.
  • Calibrated output drive.
  • 1.8V Pseudo Open drain compatible inputs/outputs.
  • 8 internal banks for.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4J55323QF-GC 256Mbit GDDR3 SDRAM
K4J55323QF-GC14 256Mbit GDDR3 SDRAM
K4J55323QF-GC15 256Mbit GDDR3 SDRAM
K4J55323QF-GC16 256Mbit GDDR3 SDRAM
K4J55323QF-GC20 256Mbit GDDR3 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.