K4J52324QE Overview
K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON...
K4J52324QE Key Features
- 1.9V + 0.1V power supply for device operation for -BJ
- 1.9V + 0.1V power supply for I/O interface for -BJ
- 1.8V + 0.1V power supply for device operation for -BC
- 1.8V + 0.1V power supply for I/O interface for -BC
- On-Die Termination (ODT)
- Output Driver Strength adjustment by EMRS
- Calibrated output drive
- 1.8V Pseudo Open drain patible inputs/outputs
- 8 internal banks for concurrent operation
- Differential clock inputs (CK and CK)
K4J52324QE Applications
- Samsung Electronics reserves the right to change products or specification without notice