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K4T51043QG - 512Mb G-die DDR2 SDRAM

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.

Cu pad on a 0.06inch thick FR4 PCB.

Key Features

  • Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4T51043Q 512Mb B-die DDR2 SDRAM
K4T51043QI 512Mb I-die DDR2 SDRAM
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K4T51083QG 512Mb G-die DDR2 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD18501Q5A www.ti.com SLPS319A – JUNE 2012 – REVISED JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18501Q5A 1 FEATURES Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 20 5.9 VGS = 4.5V VGS = 10V 1.8 3.3 2.