Samsung K4T51043QG
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.| Part No. | K4T51043QG |
|---|---|
| Datasheet | K4T51043QG Download |
| Manufacturer |  Samsung |
| Description | 512Mb G-die DDR2 SDRAM |
| Buy | Stock & Price |
FEATURES
Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 20 5.9 VGS = 4.5V VGS = 10V 1.8 3.3 2.5 UNIT V nC nC mΩ mΩ V●
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● 2 ORDERING INFORMATION
APPLICATIONS
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● DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Device CSD18501Q5A Package SON 5-mm × 6-mm Plastic Package Media 13-Inch Reel Qty 2500 Ship Tape and Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) P...
