K4T51043QG Datasheet PDF - Samsung 512Mb G-die DDR2 SDRAM Specs

K4T51043QG - 512Mb G-die DDR2 SDRAM

Datasheet Summary

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.

Cu pad on a 0.06inch thick FR4 PCB.

Features

Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

Datasheet Details

Part number	K4T51043QG
Manufacturer	Samsung
File Size	0.96 MB
Description	512Mb G-die DDR2 SDRAM
Datasheet	K4T51043QG Datasheet
Additional preview pages of the K4T51043QG datasheet.

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Full PDF Text Transcription

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CSD18501Q5A www.ti.com SLPS319A – JUNE 2012 – REVISED JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18501Q5A 1 FEATURES Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 20 5.9 VGS = 4.5V VGS = 10V 1.8 3.3 2.

Published: Apr 22, 2014 |