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K4T51083QC - 512Mb C-die DDR2 SDRAM

General Description

3.

4.

Rev.

Key Features

  • Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 4-4-4 4 12 12 51 DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin.
  • 4 independent internal banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 ,.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4T51083QG 512Mb G-die DDR2 SDRAM
K4T51083QI 512Mb I-die DDR2 SDRAM
K4T51083QJ 512Mb J-die DDR2 SDRAM
K4T51083QN 512Mb N-die DDR2 SDRAM
K4T51083QQ 512Mb Q-die DDR2 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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512Mb C-die DDR2 SDRAM DDR2 SDRAM 512Mb C-die DDR2 SDRAM Specification Version 1.2 May 2005 Page 1 of 29 Rev. 1.2 May 2005 512Mb C-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.2 Input/Output Function Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev. 1.2 May 2005 512Mb C-die DDR2 SDRAM 0. Ordering Information Org.