K4T51083QC Datasheet PDF - Samsung 512Mb C-die DDR2 SDRAM Specs

K4T51083QC - 512Mb C-die DDR2 SDRAM

Datasheet Summary

Description

Rev.

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 4-4-4 4 12 12 51 DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin.
4 independent internal banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 ,.

Datasheet Details

Part number	K4T51083QC
Manufacturer	Samsung
File Size	630.58 KB
Description	512Mb C-die DDR2 SDRAM
Datasheet	K4T51083QC Datasheet
Additional preview pages of the K4T51083QC datasheet.

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Full PDF Text Transcription

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512Mb C-die DDR2 SDRAM DDR2 SDRAM 512Mb C-die DDR2 SDRAM Specification Version 1.2 May 2005 Page 1 of 29 Rev. 1.2 May 2005 512Mb C-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.2 Input/Output Function Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev. 1.2 May 2005 512Mb C-die DDR2 SDRAM 0. Ordering Information Org.

Published: Aug 15, 2005 |