• Part: K4T51083QG
  • Description: 512Mb G-die DDR2 SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 0.96 MB
Download K4T51083QG Datasheet PDF
Samsung Semiconductor
K4T51083QG
K4T51083QG is 512Mb G-die DDR2 SDRAM manufactured by Samsung Semiconductor.
CSD18502KCS .ti. SLPS367A - AUGUST 2012 - REVISED OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18502KCS Features Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS pliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 52 8.4 VGS = 4.5V VGS = 10V 1.8 3.3 2.4 UNIT V nC nC mΩ mΩ V - - - - - - - - ORDERING INFORMATION Device CSD18502KCS Package TO-220 Plastic Package Media Tube Qty 50 Ship Tube APPLICATIONS - - - DC-DC...