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K4T51083QG Datasheet 512mb G-die Ddr2 Sdram

Manufacturer: Samsung Semiconductor

Overview: CSD18502KCS .ti. SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples:.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

Top View (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 100A TC = 125ºC Id = 100A GATE CHARGE 10 ID = 100A VDS = 20V 8 12 RDS(on) - On-State Resistance (mΩ) 10 8 6 4 2 0 6 4 2 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 0 0 5 10 15 20 25 30 35 40 Qg - Gate Charge (nC) 45 50 55 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Key Features

  • Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package.

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