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K4T51083QG - 512Mb G-die DDR2 SDRAM

This page provides the datasheet information for the K4T51083QG, a member of the K4T51043QG 512Mb G-die DDR2 SDRAM family.

Datasheet Summary

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

Features

  • Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package.

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Datasheet preview – K4T51083QG

Datasheet Details

Part number K4T51083QG
Manufacturer Samsung
File Size 0.96 MB
Description 512Mb G-die DDR2 SDRAM
Datasheet download datasheet K4T51083QG Datasheet
Additional preview pages of the K4T51083QG datasheet.

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Full PDF Text Transcription

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CSD18502KCS www.ti.com SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18502KCS 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 52 8.4 VGS = 4.5V VGS = 10V 1.8 3.3 2.
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