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K4T51163QG - 512Mb G-die DDR2 SDRAM

Product Overview

Samsung

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K4T51163QG 512Mb G-die DDR2 SDRAM by Samsung - Datasheet Preview — Datasheet preview – K4T51163QG

Datasheet Details

Part number	K4T51163QG
Manufacturer	Samsung
File Size	0.96 MB
Description	512Mb G-die DDR2 SDRAM
Datasheet	K4T51163QG Datasheet
Note	This datasheet PDF includes multiple part numbers: K4T51163QG, K4T51043QG. Please refer to the document for exact specifications by model.
Additional preview pages of the K4T51163QG datasheet.

Product details

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

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Other Datasheets by Samsung

K4T51163QB - 512Mb B-die DDR2 SDRAM
K4T51163QI - 512Mb I-die DDR2 SDRAM
K4T51163QJ - 512Mb J-die DDR2 SDRAM
K4T51163QN - 512Mb N-die DDR2 SDRAM
K4T51163QQ - 512Mb Q-die DDR2 SDRAM
K4T51043Q - 512Mb B-die DDR2 SDRAM

Published: Apr 22, 2014 |