K4T51163QG Datasheet PDF - Samsung 512Mb G-die DDR2 SDRAM Specs

K4T51163QG - 512Mb G-die DDR2 SDRAM

This page provides the datasheet information for the K4T51163QG, a member of the K4T51043QG 512Mb G-die DDR2 SDRAM family.

Datasheet Summary

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.

Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

Datasheet Details

Part number	K4T51163QG
Manufacturer	Samsung
File Size	0.96 MB
Description	512Mb G-die DDR2 SDRAM
Datasheet	K4T51163QG Datasheet
Additional preview pages of the K4T51163QG datasheet.

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Full PDF Text Transcription

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CSD18503Q5A www.ti.com SLPS358 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 13 4.3 VGS = 4.5V VGS = 10V 1.8 4.7 3.

Published: Apr 22, 2014 |