This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | K4T51163QG |
|---|---|
| Datasheet | K4T51163QG K4T51043QG Datasheet (PDF) |
| File Size | 0.96 MB |
| Manufacturer | Samsung Semiconductor |
| Description | 512Mb G-die DDR2 SDRAM |
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The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Cu pad on a 0.06inch thick FR4 PCB. NexFET is a trademark of Texas Instruments.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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K4T51163QB-GCD5 | 512Mb B-die DDR2 SDRAM | Samsung semiconductor |
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K4T51163QB-ZCD5 | 512Mb B-die DDR2 SDRAM | Samsung semiconductor |
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K4T51163QE | 512Mb E-die DDR2 SDRAM Specification | Samsung semiconductor |
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K4T51163QB | 512Mb B-die DDR2 SDRAM |
| K4T51163QI | 512Mb I-die DDR2 SDRAM |
| K4T51163QJ | 512Mb J-die DDR2 SDRAM |
| K4T51163QN | 512Mb N-die DDR2 SDRAM |
| K4T51163QQ | 512Mb Q-die DDR2 SDRAM |
| K4T51043Q | 512Mb B-die DDR2 SDRAM |
| K4T51043QG | 512Mb G-die DDR2 SDRAM |
| K4T51043QI | 512Mb I-die DDR2 SDRAM |
| K4T51043QJ | 512Mb J-die DDR2 SDRAM |
| K4T51083QC | 512Mb C-die DDR2 SDRAM |
