K4T56083QF Datasheet PDF (256Mb F-die DDR2 SDRAM)

K4T56083QF - 256Mb F-die DDR2 SDRAM

Description

Rev.

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin.
4 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read.

Datasheet Details

Part number	K4T56083QF
Manufacturer	Samsung
File Size	477.73 KB
Description	256Mb F-die DDR2 SDRAM
Datasheet	K4T56083QF Datasheet
Additional preview pages of the K4T56083QF datasheet.

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Full PDF Text Transcription

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256Mb F-die DDR2 SDRAM DDR2 SDRAM 256Mb F-die DDR2 SDRAM Specification Version 1.5 February 2005 Page 1 of 27 Rev. 1.5 Feb. 2005 256Mb F-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.2 Input/Output Function Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 27 Rev. 1.5 Feb. 2005 256Mb F-die DDR2 SDRAM 0.

Published: Aug 15, 2005 |