K5N1229ACD-BQ12 - MCP Memory

Description

The K5N1229ACD is a Multi Chip Package Memory which combines 512Mb SLC MuxNOR Flash Memory and 128Mb Multiplexed Synchronous Burst Uni-Transistor Random Access Memory2.

The 512Mb Muxed NOR Flash featuring single 1.8V power supply is a 512Mbit Muxed Burst Multi Bank Flash Memory organized as 32Mx16.

Features

Operating Temperature : -25°C ~ 85°C.
Package : 56Ball FBGA Type - 8mm x 9.2mm x 1.2mmt 0.5mm ball pitch.
This device has the Sync MRS option only (Extended Configuration Register).
Single Voltage, 1.7V to 1.95V for Read and Write operations.
Organization - 33,554,432 x 16 bit ( Word Mode Only).
Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15.
Read While Program/Erase Operation.
Mul.

Samsung

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Datasheet Details

Part number	K5N1229ACD-BQ12
Manufacturer	Samsung
File Size	2.99 MB
Description	MCP Memory
Datasheet	K5N1229ACD-BQ12 Datasheet
Additional preview pages of the K5N1229ACD-BQ12 datasheet.

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Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.

Published: Nov 22, 2013 |