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K7D803671B Datasheet

Manufacturer: Samsung Semiconductor
K7D803671B datasheet preview

Datasheet Details

Part number K7D803671B
Datasheet K7D803671B-Samsung.pdf
File Size 299.69 KB
Manufacturer Samsung Semiconductor
Description SRAM
K7D803671B page 2 K7D803671B page 3

K7D803671B Overview

K7D803671B K7D801871B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. 0.0 History -Initial document. 0.1 -ZQ tolerance changed from 10% to 15% Rev.

K7D803671B Key Features

  • 256Kx36 or 512Kx18 Organizations
  • 153(9x17) Pin Ball Grid Array Package(14mm x 22mm)
  • Programmable Impedance Output Drivers
  • Maximum Frequency : 333MHz (Data Rate : 666Mbps)
  • 2.5V Core/1.5V Output Power Supply(2.0V max VDDQ)
  • HSTL Input and Outputs
  • Single Differential HSTL Clock
  • Synchronous Pipeline Mode of Operation with Self-Timed Late Write
  • Free Running Active High and Active Low Echo Clock Output Pin
  • Asynchronous Output Enable
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Part Number Description
K7D801871B SRAM

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