K9K8G08U0M
Description
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.
Key Features
- Voltage Supply - 2.70V ~ 3.60V
- Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max.) - Serial Access : 25ns(Min.)
- Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years
- mand Driven Operation
- Intelligent Copy-Back with internal 1bit/528Byte EDC
