K9K8G08U0M Datasheet

Manufacturer: Samsung Semiconductor

Datasheet Details

Part number	K9K8G08U0M
Datasheet	K9K8G08U0M_Samsungsemiconductor.pdf
File Size	1.19 MB
Manufacturer	Samsung Semiconductor
Description	1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

K9K8G08U0M Overview

K9WAG08U1M K9K8G08U0M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS"...

K9K8G08U0M Key Features

Voltage Supply
2.70V ~ 3.60V
Organization
Memory Cell Array : (1G + 32M) x 8bit
Data Register : (2K + 64) x 8bit
Automatic Program and Erase
Page Program : (2K + 64)Byte
Block Erase : (128K + 4K)Byte
Page Read Operation
Page Size : (2K + 64)Byte

K9K8G08U0M Applications

Samsung Electronics reserves the right to change products or specification without notice

K9K8G08U0M from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	K9K8G08U0M	1G x 8 Bit / 2G x 8 Bit NAND Flash Memory	Samsung semiconductor
	K9K8G08U0A	(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory	Samsung semiconductor

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number	Description
K9K8G08U0D	4Gb D-die NAND Flash
K9K8G08U0E	4Gb E-die NAND Flash
K9K8G08U0F	4Gb F-die NAND Flash
K9K8G08U1B	FLASH MEMORY
K9K8G08U1D	4Gb D-die NAND Flash
K9K8G08U1E	4Gb E-die NAND Flash
K9K8G08U1M	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K2G08U0M-VIB0	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-YCB0	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-YIB0	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory