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K9KAG08U0M Datasheet FLASH MEMORY

Manufacturer: Samsung Semiconductor

Overview: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Download the K9KAG08U0M datasheet PDF. This datasheet also includes the K9WB-G08U variant, as both parts are published together in a single manufacturer document.

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Key Features

  • Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
  • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • K9NCG08U5M : 50ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.

More Datasheets from Samsung Semiconductor

Part Number Description
K9K2G08U0M-VIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-P 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory