K9LCGD8S1M-B - FLASH MEMORY

This page provides the datasheet information for the K9LCGD8S1M-B, a member of the K9GB-GD8 FLASH MEMORY family.

Product Overview

Samsung

Part number	K9LCGD8S1M-B
Manufacturer	Samsung
File Size	1.10 MB
Description	FLASH MEMORY
Datasheet	K9LCGD8S1M-B Datasheet
Additional preview pages of the K9LCGD8S1M-B datasheet.

Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit.

The device is offered in 3.3V Vcc & VccQ.

(3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate.

Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V.
Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit.
Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte.
Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ. ) , 100µs(Max. ) - Data Transfer rate : 133Mbps(VccQ:3.3V) / 66Mbps(VccQ:1.8V).
Fast Write Cycle Time - Page Program time.

K9LAG08U0M - Flash Memory (Samsung Electronics)
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K9LBG08U0D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9LBG08U0M - FLASH MEMORY (Samsung Electronics)

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Published: Sep 30, 2015 |