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K9LCGD8U1M-B Datasheet Flash Memory

Manufacturer: Samsung Semiconductor

Overview: K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Advance FLASH MEMORY K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit.
  • Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte.
  • Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ. ) , 100µs(Max. ) - Data Transfer rate : 133Mbps(VccQ:3.3V) / 66Mbps(VccQ:1.8V).
  • Fast Write Cycle Time - Page Program time.

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