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K9PFGD8U5M-B - FLASH MEMORY

Download the K9PFGD8U5M-B datasheet PDF. This datasheet also covers the K9GB-GD8 variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit.

The device is offered in 3.3V Vcc & VccQ.

(3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate.

Features

  • Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit.
  • Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte.
  • Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ. ) , 100µs(Max. ) - Data Transfer rate : 133Mbps(VccQ:3.3V) / 66Mbps(VccQ:1.8V).
  • Fast Write Cycle Time - Page Program time.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K9GB-GD8-U0M.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Advance FLASH MEMORY K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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