K9PFGD8X7M Datasheet | Samsung Semiconductor

K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Advance FLASH MEMORY K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar appli cations where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. - Samsung Electronics reserves the right to change products or specification without notice. K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Document Title Samsung Toggle Mode DDR NAND Specification Revision History Revision No History 0.0 0.1 0.1.5 0.2 0.3 1. Initial issue 1. Restriction of mand latch cycle is noted. 2. Output driver strength impedence values for Vcc Q=1.8V is added. 1. K9LCGD8U1M-B, K9LCGD8S1M-B are added. 2. K9HDGD8U5M-B, K9HDGD8S5M-B are added. 3. K9PFGD8U7M-B, K9PFGD8S7M-B are added. 4. Ball pitch is changed from 1.4mm to 1.0mm. 1. Package type is changed from 100FBGA t o 180FBGA. 2. Output Driver Strength Values are changed. 3. Note 1 of 5.16 is amended. (Icc1 30m A -> 50m A) 1. Max. t R is changed from 400us to 80us. 2. Typ. t PROG is changed from 1.6ms to 2ms. 0.4 1. K9PFGD8U5M-B, K9PFGD8S5M-B are added. 2. Package dimension is amended. 3. Chip2 Status mand(F2h) is added for K9PFGD8X5M. 4. Functional block diagram is modified. 5. A34 is added...