SW036R10E8S

SW036R10E8S is N-channel Enhanced mode TO-220/TO-263 MOSFET manufactured by Samwin.

SW036R10E8S Datasheet

Part number	SW036R10E8S
Download	SW036R10E8S Datasheet (PDF)
File Size	538.81 KB
Manufacturer	Samwin
Description	N-channel Enhanced mode TO-220/TO-263 MOSFET

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SW036R10E8S Distributor

SW036R10E8S Description

Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.

SW036R10E8S Key Features

High ruggedness
Low RDS(ON) (Typ 3.8mΩ)@VGS=10V
Low Gate Charge (Typ 85nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification

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