Datasheet Summary
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
TO-263
- High ruggedness
- Low RDS(ON) (Typ 3.8mΩ)@VGS=10V
- Low Gate Charge (Typ 85nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification,
Li Battery Protect Board, Motor Drivers
12 3
12 3
General Description
1. Gate 2.Drain 3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes
BVDSS : 100V
: 175A
RDS(ON) :3.8mΩ
1 3
Item
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