SW036R10E8S
Overview
Gate This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
- High ruggedness
- Low RDS(ON) (Typ 3.8mΩ)@VGS=10V
- Low Gate Charge (Typ 85nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
