SW036R10E8S - N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

excellent avalanche characteristics.

Key Features

TO-220 TO-263.
High ruggedness.
Low RDS(ON) (Typ 3.8mΩ)@VGS=10V.
Low Gate Charge (Typ 85nC).
Improved dv/dt Capability.
100% Avalanche Tested.

📥 Download Datasheet

SW036R10E8S n-channel enhanced mode to-220/to-263 mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW036R10E8S
Manufacturer	Samwin
File Size	538.81 KB
Description	N-channel Enhanced mode TO-220/TO-263 MOSFET
Datasheet	SW036R10E8S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SW03B-V1	Human body thermal release infrared sensing controller	ASCHIP
SW05-0311	Match GaAs SPST Switch	Tyco Electronics
SW05P	PIANO SWITCH	AUK
SW05P-K	PIANO SWITCH	AUK
SW05R-RD	SLIDE SWITCH	AUK

Other Datasheets by Samwin

Part Number	Description
SW038R10ES	N-channel MOSFET
SW040R03VLT	N-channel Enhanced mode TO-252 MOSFET
SW055R06E7T	N-channel MOSFET
SW055R68E7T	N-channel MOSFET
SW058R72E7T	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 85nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Motor Drivers 12 3 12 3 General Description 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 100V ID : 175A RDS(ON) :3.