Datasheet Summary
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
- High ruggedness
- Low RDS(ON) (Typ 3.6mΩ)@VGS=10V
- Low Gate Charge (Typ 132nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectification,
Inverter , Li Battery Protect Board
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 100V
: 120A
RDS(ON) : 3.6mΩ
1 3
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