Datasheet Details
| Part number | SW038R10ES |
|---|---|
| Manufacturer | Samwin |
| File Size | 677.47 KB |
| Description | N-channel MOSFET |
| Datasheet | SW038R10ES-Samwin.pdf |
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|
Overview: SW038R10ES N-channel Enhanced mode TO-247 MOSFET.
| Part number | SW038R10ES |
|---|---|
| Manufacturer | Samwin |
| File Size | 677.47 KB |
| Description | N-channel MOSFET |
| Datasheet | SW038R10ES-Samwin.pdf |
|
|
|
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 100V ID : 120A RDS(ON) : 3.6mΩ 2 1 3 Order Codes Item Sales Type Marking Package Packaging 1 SW T 038R10ES SW038R10ES TO-247 TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
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