SW038R10ES - N-channel MOSFET

Samwin

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

TO-247.
High ruggedness.
Low RDS(ON) (Typ 3.6mΩ)@VGS=10V.
Low Gate Charge (Typ 132nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW038R10ES n-channel mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW038R10ES
Manufacturer	Samwin
File Size	677.47 KB
Description	N-channel MOSFET
Datasheet	SW038R10ES Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW038R10ES N-channel Enhanced mode TO-247 MOSFET Features TO-247  High ruggedness  Low RDS(ON) (Typ 3.6mΩ)@VGS=10V  Low Gate Charge (Typ 132nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Inverter , Li Battery Protect Board 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 100V ID : 120A RDS(ON) : 3.